High/Low Temperature Tests for GaN and SiC Devices

In recent years, power devices for high temperature operation and high-speed controllable power converters are being produced in the semiconductor industry. For the coming high power society "super materials", such as Silicon Carbide (SiC) and Gallium Nitride (GaN), are attracting attention. Since practical applications and mass production are already reality, development and commercialization of SiC and GaN devices call for value-added quality assurance.

Thanks to our Company's experienced engineers we perform high-low temperature testing with measurements up to 250°C being possible. Further, as an added benefit, you can obtain results without your extra in-house effort and man-hours, thus minimizing test time.

Upon submission of test sample we offer everything from test support to a feedback with results.

Please feel free to inquire about further details.

• 
  Temperature dependence of forward characteristics
• 
  Temperature dependence of reverse characteristics

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