All-around Evaluation Service for Next-Generation Power Semiconductors

GaN (gallium nitride) and SiC (silicon carbide) are attracting attention as next-generation power semiconductor materials. GaN is popular for high-speed switching operation while allowing relatively easy production of wafers with large diameters. Advantages of SiC include the ability of handling of high-voltage, high capacity power at low loss. As a one-stop service, OKI Engineering offers everything from basic characteristics measurement all the way up to individual tests and failure analysis specifically tailored to the evaluation of next-generation power semiconductors.

  • Support of high-current and wide-temperature characteristics measurements.
  • Support of flexible reliability tests with the latest failure analysis tools and techniques.

Measurement of Electrical Characteristics

Example of high-current (500A max.) and wide-temperature (-60 to +300°C) electrical characteristics measurement.

SiC MOSFET Vg-Id characteristic (-55 ~ 250°C)

We can measure high current (500A max.) and a wide temperature range (-60 ~ 300°C) of a SiC device.

Reliability Tests

We perform flexible reliability tests.

ESD test and failure analysis

Failure investigation by means of ESD test and failure analysis. In this example, a breakdown occurred at the gate bottom (drain side) in addition to a destruction at the gate side wall (source side).

Determination of failure location using the latest thermal emission analysis method → Analysis.

We provide support for failure analysis using the latest analysis tools and techniques plus solutions which remedy problems.

  • Lock-in heat generation analysis (overlayed image)
    Lock-in thermal emission analysis
    (overlaid image)
  • SEM analysis cross-section image
    SEM analysis cross-section image
  • SEM analysis cross-section image
    TEM analysis cross-section image

We locate failure in a Power MOS using a Lock-in thermal emission analysis device (including non-destructive detection).

We determine failure origin by varied physical analysis following failure identification.

Pickup Contents