GaN (gallium nitride) and SiC (silicon carbide) are attracting attention as next-generation power semiconductor materials. GaN is popular for high-speed switching operation while allowing relatively easy production of wafers with large diameters. Advantages of SiC include the ability of handling of high-voltage, high capacity power at low loss. As a one-stop service, OKI Engineering offers everything from basic characteristics measurement all the way up to individual tests and failure analysis specifically tailored to the evaluation of next-generation power semiconductors.
SiC MOSFET Vg-Id characteristic (-55 ~ 250°C)
ESD test and failure analysis