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All-around Evaluation Service for Next-Generation Power Semiconductors

GaN (gallium nitride) and SiC (silicon carbide) are attracting attention as next-generation power semiconductor materials. GaN is popular for high-speed switching operation while allowing relatively easy production of wafers with large diameters. Advantages of SiC include the ability of handling of high-voltage, high capacity power at low loss. As a one-stop service, OKI Engineering offers everything from basic characteristics measurement all the way up to individual tests and failure analysis specifically tailored to the evaluation of next-generation power semiconductors.

  • Support of high-current and wide-temperature characteristics measurements.
  • Support of flexible reliability tests (power cycle tests, etc.) with the latest failure analysis tools and techniques.

Measurement of Electrical Characteristics

Example of high-current (500A max.) and wide-temperature (-60 to +300°C) electrical characteristics measurement.

  • Reverse recovery (trr) measurement diagram of a Power MOSFET's internal diode.
    Measurement of diode reverse recovery time (trr)
  • Measurement of IGBT turn-off time (tf)
    Measurement of IGBT turn-off time (tf)
  • SiC MOSFET Vg-Id characteristic (-55 ~ 250°C)
    SiC MOSFET Vg-Id characteristic (-55 ~ 250°C)

We accurately measure the diode's important switching characteristics, trr (reverse recovery time).

We accurately measure the IGBT's important loss characteristics, tf (turn-off time).

We can measure high current (500A max.) and a wide temperature range (-60 ~ 300°C) of a SiC device.

Reliability Tests

We perform flexible reliability tests.

  • Power cycle test circuit diagram
    Power cycle test circuit diagram
  • ESD test and failure analysis
    ESD test and failure analysis
  • Avalanche tolerance test
    Avalanche tolerance test

Set ID (drain current), etc. for exposing the junction to the max. temperature and execute an operating test intermittently.

Verification of device performance by the avalanche resistance.

Failure investigation by means of ESD test and failure analysis. In this example, a breakdown occurred at the gate bottom (drain side) in addition to a destruction at the gate side wall (source side).

Determination of failure location using the latest thermal emission analysis method → Analysis.

We provide support for failure analysis using the latest analysis tools and techniques plus solutions which remedy problems.

  • Lock-in heat generation analysis (overlayed image)
    Lock-in thermal emission analysis
    (overlaid image)
  • SEM analysis cross-section image
    SEM analysis cross-section image
  • SEM analysis cross-section image
    TEM analysis cross-section image

We locate failure in a Power MOS using a Lock-in thermal emission analysis device (including non-destructive detection).

We determine failure origin by varied physical analysis following failure identification.

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