High Power-resistant Device Testing
Alongside increasing electronic equipment performance, power switch devices tend to higher efficiency and power capability. Responding to our customers' various needs for measurements, including power devices, our company designs and develops an original measurement system. Hereafter, we introduce a practical example of fall time （tf） m easurement of an IGBT （VCE=600V, IC=30A） device.
Fall Time Measurement of an Insulated Gate Bipolar Transistor
Figure 1 shows the tf test circuit, figure 2 the turn-off switching waveform, while tf corresponds to the time from Ic = 27A （90%） to Ic = 3A （10%）.
The magnified section in figure 2 unveils that the high efficiency characteristic of tf can be accurately measured.
